Additional information
by Erika R. Crandall (Author)
This book examines formation of whiskers on tin film surfaces, using reproducible laboratory-created whiskers under a variety of controlled environmental factors. Discusses how to impede or prevent whisker growth, including use of hard metal capping films.
Back Jacket
Tin (Sn) whiskers are electrically conductive, single crystal eruptions that grow from Sn film surfaces. Their high aspect ratio presents reliability problems for the electronics industry due to bridging and metal arcing, leading to malfunctions and catastrophic failures in many electronic systems (including satellite and defense sectors). Due to legislation in the EU, Japan, and the U.S., mandating a gradual shift from lead (Pb)-based to lead-free solders and board finishes, there has been a reemergence of Sn whiskers. Continuing reports of Sn whisker induced failures coupled with the lack of an industry-accepted understanding of whisker growth and/or test methods to identify whisker prone products has made pure/high Sn substitutes a risky proposition in high reliability systems.
This thesis is designed to clarify and control the fundamental mechanisms that govern whisker formation. The research focuses on reproducible "laboratory" created whiskers under a variety of rigorously controlled environmental factors such as film thickness, film stress, substrate material, gas environment, and humidity exposure, which are known to play a significant role in whisker production. The ultimate question of how to impede and/or prevent whisker growth is also addressed and shows that whisker prevention is possible via hard metal capping films, which are impenetrable by whiskers.
Author Biography
Erika Crandall received her Ph.D. from the Department of Physics at Auburn University under supervisor Michael Bozack. She was awarded the 2012 Outstanding Doctoral Student Award from Auburn University, and was the inaugural recipient of the IEEE International Holm Conference Young Investigator Award for her paper "Whisker Growth Under Controlled Humidity Exposure."
